Comparison of heavy ion and pulsed laser single-event effect test data for analogue and digital devices

This thesis examines the comparison of heavy ion and pulse laser SEE testing in analogue (LM124 operational amplifier) and digital parts (23LCV512 SRAM). The testing was conducted for Radtest Ltd and the goal was to collect data for their pulsed laser testing system, SEREEL2. The heavy ion testing w...

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Main Author: Häkkinen, Annika
Other Authors: Matemaattis-luonnontieteellinen tiedekunta, Faculty of Sciences, Fysiikan laitos, Department of Physics, Jyväskylän yliopisto, University of Jyväskylä
Format: Master's thesis
Language:eng
Published: 2024
Subjects:
Online Access: https://jyx.jyu.fi/handle/123456789/97142
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author Häkkinen, Annika
author2 Matemaattis-luonnontieteellinen tiedekunta Faculty of Sciences Fysiikan laitos Department of Physics Jyväskylän yliopisto University of Jyväskylä
author_facet Häkkinen, Annika Matemaattis-luonnontieteellinen tiedekunta Faculty of Sciences Fysiikan laitos Department of Physics Jyväskylän yliopisto University of Jyväskylä Häkkinen, Annika Matemaattis-luonnontieteellinen tiedekunta Faculty of Sciences Fysiikan laitos Department of Physics Jyväskylän yliopisto University of Jyväskylä
author_sort Häkkinen, Annika
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description This thesis examines the comparison of heavy ion and pulse laser SEE testing in analogue (LM124 operational amplifier) and digital parts (23LCV512 SRAM). The testing was conducted for Radtest Ltd and the goal was to collect data for their pulsed laser testing system, SEREEL2. The heavy ion testing was done in Heavy Ion Facility at UCLouvain, Belgium. For the LM124, SET cross sections were calculated and presented as a function of LET. These results showed that the saturation started from around the LET of 30 MeV/(mg/cm ) which was similar result to the literature. The pulse shapes from the laser testing were connected to specific transistors with the layout of the device and could be compared between heavy ion data. This comparison showed that the pulse shapes from the heavy ions were possible to be connected to specific transistors. The SET cross sections were calculated also for the most common pulse shape groups and they were presented with the different values of LET. For the 23LCV512, SEU cross sections – for both heavy ion and laser testing – were calculated and presented as a function of LET and laser pulse energy. Unlike with LM124, for the 23LCV512 the same test method did not transfer as well between heavy ion and laser testing. Thus the resulting SEUs were not triggered from the same area resulting in different formats of SEUs. As a solution for this, options like backside testing were discussed.
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The testing was conducted for Radtest Ltd and the goal was to collect data for their pulsed laser testing system, SEREEL2. The heavy ion testing was done in Heavy Ion Facility at UCLouvain, Belgium. For the LM124, SET cross sections were calculated and presented as a function of LET. These results showed that the saturation started from around the LET of 30 MeV/(mg/cm ) which was similar result to the literature. The pulse shapes from the laser testing were connected to specific transistors with the layout of the device and could be compared between heavy ion data. This comparison showed that the pulse shapes from the heavy ions were possible to be connected to specific transistors. The SET cross sections were calculated also for the most common pulse shape groups and they were presented with the different values of LET. For the 23LCV512, SEU cross sections \u2013 for both heavy ion and laser testing \u2013 were calculated and presented as a function of LET and laser pulse energy. 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spellingShingle Häkkinen, Annika Comparison of heavy ion and pulsed laser single-event effect test data for analogue and digital devices single-event effects heavy ion testing pulsed laser testing Fysiikka Physics 4021 säteily mikroelektroniikka radiation microelectronics
title Comparison of heavy ion and pulsed laser single-event effect test data for analogue and digital devices
title_full Comparison of heavy ion and pulsed laser single-event effect test data for analogue and digital devices
title_fullStr Comparison of heavy ion and pulsed laser single-event effect test data for analogue and digital devices Comparison of heavy ion and pulsed laser single-event effect test data for analogue and digital devices
title_full_unstemmed Comparison of heavy ion and pulsed laser single-event effect test data for analogue and digital devices Comparison of heavy ion and pulsed laser single-event effect test data for analogue and digital devices
title_short Comparison of heavy ion and pulsed laser single-event effect test data for analogue and digital devices
title_sort comparison of heavy ion and pulsed laser single event effect test data for analogue and digital devices
title_txtP Comparison of heavy ion and pulsed laser single-event effect test data for analogue and digital devices
topic single-event effects heavy ion testing pulsed laser testing Fysiikka Physics 4021 säteily mikroelektroniikka radiation microelectronics
topic_facet 4021 Fysiikka Physics heavy ion testing microelectronics mikroelektroniikka pulsed laser testing radiation single-event effects säteily
url https://jyx.jyu.fi/handle/123456789/97142 http://www.urn.fi/URN:NBN:fi:jyu-202409236019
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