Investigate the radiation response of Heterojunction Bipolar Transistors impact of X-ray irradiation on DC and Low Frequency Noise characteristics
SiGe HBTs have emerged to meet the burgeoning demand of wireless communication and high-speed niche applications at a compelling cost advantage. The high integration capability of SiGe technology with CMOS provides a favorable opportunity to leverage the advantages of both technologies. But in recen...
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| Muut tekijät: | , , , , , |
| Aineistotyyppi: | Pro gradu |
| Kieli: | eng |
| Julkaistu: |
2023
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| Aiheet: | |
| Linkit: | https://jyx.jyu.fi/handle/123456789/89359 |