Investigate the radiation response of Heterojunction Bipolar Transistors : impact of X-ray irradiation on DC and Low Frequency Noise characteristics

Investigate the radiation response of Heterojunction Bipolar Transistors impact of X-ray irradiation on DC and Low Frequency Noise characteristics

SiGe HBTs have emerged to meet the burgeoning demand of wireless communication and high-speed niche applications at a compelling cost advantage. The high integration capability of SiGe technology with CMOS provides a favorable opportunity to leverage the advantages of both technologies. But in recen...

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Bibliographic Details
Main Author: Ayenew, Adebabay Belie
Other Authors: Matemaattis-luonnontieteellinen tiedekunta, Faculty of Sciences, Fysiikan laitos, Department of Physics, Jyväskylän yliopisto, University of Jyväskylä
Format: Master's thesis
Language:eng
Published: 2023
Subjects:
annealing
Gummel plot
low frequency noise (LFN)
SiGe: C HBT
total ionizing dose (TID)
X-ray irradiation
Elektroniikka
Electronics
4022
transistorit
säteily
transistors
radiation
Online Access: https://jyx.jyu.fi/handle/123456789/89359

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