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[{"key": "dc.contributor.author", "value": "Rinki\u00f6, Marcus", "language": "", "element": "contributor", "qualifier": "author", "schema": "dc"}, {"key": "dc.date.accessioned", "value": "2022-03-25T12:36:27Z", "language": "", "element": "date", "qualifier": "accessioned", "schema": "dc"}, {"key": "dc.date.available", "value": "2022-03-25T12:36:27Z", "language": "", "element": "date", "qualifier": "available", "schema": "dc"}, {"key": "dc.date.issued", "value": "2009", "language": null, "element": "date", "qualifier": "issued", "schema": "dc"}, {"key": "dc.identifier.isbn", "value": "978-951-39-3720-1", "language": null, "element": "identifier", "qualifier": "isbn", "schema": "dc"}, {"key": "dc.identifier.uri", "value": "https://jyx.jyu.fi/handle/123456789/80377", "language": "", "element": "identifier", "qualifier": "uri", "schema": "dc"}, {"key": "dc.description.abstract", "value": "In this thesis the memory effect and negative differential resistance (NDR) rising\r\nfrom the hysteresis present in carbon nanotube \ufb01eld-effect transistors (CNT-FETs)\r\nwith high-\u03ba gate dielectrics is discussed. A high-yield fabrication method is devel-\r\noped where Hf-based gate dielectrics are used to control the memory effect by de-\r\nsigning the gate dielectric in nm-thin layers. The \ufb01rst CNT-FETs with consistent and\r\nnarrow distribution memory effects in their transfer characteristics are achieved, by\r\nusing atomic layer depositions of HfO2 and TiO2 in a triple-layer con\ufb01guration. The\r\neffect of humidity on the hysteresis of the triple-layer gate dielectric is found to be\r\nsmaller than in CNT-FETs having the more common SiO2 gate dielectric.\r\nAs a \ufb01gure of merit, a 100 ns Write/Erase speed is achieved with CNT-FET\r\nmemory elements having HfO2 as a gate and passivation dielectric. This speed is\r\nhigh enough to compete with state of the art commercial Flash memories. Also the\r\nendurance of the memory elements is shown to exceed 104 cycles. A model where\r\nthe hafnium oxide has defect states situated above, but close in energy to, the band\r\ngap of the CNT is discussed. The fast and effective charging and discharging of the\r\ndefects is shown to be a likely explanation to the 100 ns operation speed, largely\r\nexceeding the CNT-FET memory speeds of 10 ms observed earlier.\r\nBy patterning the triple-layer high-\u03ba gate oxide, quantum dots can be induced\r\ninto the channel of CNT-FETs. This in turn is used to attain controllable and gate-\r\ntunable NDR in these devices. The method is fully scalable and opens up a new\r\navenue for electronic nanoscale devices using NDR in their operation, e.g. nanoscale\r\nampli\ufb01ers, fast switching elements and high-frequency oscillators operating in the\r\nTHz domain. All the above \ufb01ndings indicate strong charge trapping in the Hf-based\r\ngate dielectrics, which can be utilized in many ways by carefully designing the gate\r\ndielectric to suit the application.", "language": "en", "element": "description", "qualifier": "abstract", "schema": "dc"}, {"key": "dc.description.provenance", "value": "Submitted by Miia Hakanen (mihakane@jyu.fi) on 2022-03-25T12:36:27Z\r\nNo. of bitstreams: 0", "language": "en", "element": "description", "qualifier": "provenance", "schema": "dc"}, {"key": "dc.description.provenance", "value": "Made available in DSpace on 2022-03-25T12:36:27Z (GMT). No. of bitstreams: 0\r\n Previous issue date: 2009", "language": "en", "element": "description", "qualifier": "provenance", "schema": "dc"}, {"key": "dc.language.iso", "value": "eng", "language": null, "element": "language", "qualifier": "iso", "schema": "dc"}, {"key": "dc.publisher", "value": "University of Jyv\u00e4skyl\u00e4", "language": "", "element": "publisher", "qualifier": null, "schema": "dc"}, {"key": "dc.relation.ispartofseries", "value": "Jyv\u00e4skyl\u00e4n yliopisto. Fysiikan laitos. Research report", "language": null, "element": "relation", "qualifier": "ispartofseries", "schema": "dc"}, {"key": "dc.relation.haspart", "value": "<b>Artikkeli I:</b> Zavodchikova, M., Johansson, A., Rinki\u00f6, M., Toppari, J., Nasibulin, A., Kauppinen, E., & T\u00f6rm\u00e4, P. (2007). Fabrication of carbon nanotube-based field-effect transistors for studies of their memory effects. <i>Physica Status Solidi (b), 244, 4188.</i> DOI: <a href=\"https://doi.org/10.1002/pssb.200776187\"target=\"_blank\"> 10.1002/pssb.200776187</a>", "language": "", "element": "relation", "qualifier": "haspart", "schema": "dc"}, {"key": "dc.relation.haspart", "value": "<b>Artikkeli II:</b> Rinki\u00f6, M., Zavodchikova, M., T\u00f6rm\u00e4, P., & Johansson, A. (2008). Effect of humidity on the hysteresis of single walled carbon nanotube field effect transistors. <i>Physica Status Solidi B, (245), 2315.</i> DOI: <a href=\"https://doi.org/10.1002/pssb.200879596\"target=\"_blank\"> 10.1002/pssb.200879596</a>", "language": "", "element": "relation", "qualifier": "haspart", "schema": "dc"}, {"key": "dc.relation.haspart", "value": "<b>Artikkeli III:</b> Rinki\u00f6, M., Johansson, A., Zavodchikova, M., Toppari, J., Nasibulin, A. G., Kauppinen, E., & T\u00f6rm\u00e4, P. (2008). High-yield of memory elements from carbon nanotube field-efect transistors with atomic layer deposited gate dielectric. <i>New Journal of Physics, (10), 103019.</i>", "language": "", "element": "relation", "qualifier": "haspart", "schema": "dc"}, {"key": "dc.relation.haspart", "value": "<b>Artikkeli IV:</b> Rinki\u00f6, M., Johansson, A., Paraoanu, G., & T\u00f6rm\u00e4, P. (2009). High-Speed Memory from Carbon Nanotube Field-Effect Transistors with High-kappa Gate Dielectric. <i>Nano Lett., (9), 643.</i> DOI: <a href=\"https://doi.org/10.1021/nl8029916\"target=\"_blank\"> 10.1021/nl8029916</a>", "language": "", "element": "relation", "qualifier": "haspart", "schema": "dc"}, {"key": "dc.relation.haspart", "value": "<b>Artikkeli V:</b> Rinki\u00f6, M., Johansson, A., Kotim\u00e4ki, V., & T\u00f6rm\u00e4, P.(2010. Negative Differential Resistance in Carbon Nanotube Field-Effect Transistors with Patterned Gate Oxide. <i>ACS Nano 4, 6, 3356\u20133362.</i> DOI: <a href=\"https://doi.org/10.1021/nn100208v\"target=\"_blank\"> 10.1021/nn100208v </a>", "language": "", "element": "relation", "qualifier": "haspart", "schema": "dc"}, {"key": "dc.rights", "value": "In Copyright", "language": null, "element": "rights", "qualifier": null, "schema": "dc"}, {"key": "dc.title", "value": "Carbon nanotube memory devices with high-\u03ba gate dielectrics", "language": "", "element": "title", "qualifier": null, "schema": "dc"}, {"key": "dc.type", "value": "doctoral thesis", "language": null, "element": "type", "qualifier": null, "schema": "dc"}, {"key": "dc.identifier.urn", "value": "URN:ISBN:978-951-39-3720-1", "language": null, "element": "identifier", "qualifier": "urn", "schema": "dc"}, {"key": "dc.type.ontasot", "value": "V\u00e4it\u00f6skirja", "language": "fi", "element": "type", "qualifier": "ontasot", "schema": "dc"}, {"key": "dc.type.ontasot", "value": "Doctoral dissertation", "language": "en", "element": "type", "qualifier": "ontasot", "schema": "dc"}, {"key": "dc.contributor.faculty", "value": "Faculty of Mathematics and Science", "language": "en", "element": "contributor", "qualifier": "faculty", "schema": "dc"}, {"key": "dc.contributor.faculty", "value": "Matemaattis-luonnontieteellinen tiedekunta", "language": "fi", "element": "contributor", "qualifier": "faculty", "schema": "dc"}, {"key": "dc.contributor.organization", "value": "University of Jyv\u00e4skyl\u00e4", "language": "en", "element": "contributor", "qualifier": "organization", "schema": "dc"}, {"key": "dc.contributor.organization", "value": "Jyv\u00e4skyl\u00e4n yliopisto", "language": "fi", "element": "contributor", "qualifier": "organization", "schema": "dc"}, {"key": "dc.type.coar", "value": "http://purl.org/coar/resource_type/c_db06", "language": null, "element": "type", "qualifier": "coar", "schema": "dc"}, {"key": "dc.relation.issn", "value": "0075-465X", "language": null, "element": "relation", "qualifier": "issn", "schema": "dc"}, {"key": "dc.rights.accesslevel", "value": "openAccess", "language": null, "element": "rights", "qualifier": "accesslevel", "schema": "dc"}, {"key": "dc.type.publication", "value": "doctoralThesis", "language": null, "element": "type", "qualifier": "publication", "schema": "dc"}, {"key": "dc.rights.url", "value": "https://rightsstatements.org/page/InC/1.0/", "language": null, "element": "rights", "qualifier": "url", "schema": "dc"}]
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