Carbon nanotube memory devices with high-κ gate dielectrics

In this thesis the memory effect and negative differential resistance (NDR) rising from the hysteresis present in carbon nanotube field-effect transistors (CNT-FETs) with high-κ gate dielectrics is discussed. A high-yield fabrication method is devel- oped where Hf-based gate dielectrics are used t...

Full description

Bibliographic Details
Main Author: Rinkiö, Marcus
Other Authors: Faculty of Mathematics and Science, Matemaattis-luonnontieteellinen tiedekunta, University of Jyväskylä, Jyväskylän yliopisto
Format: Doctoral dissertation
Language:eng
Published: 2009
Online Access: https://jyx.jyu.fi/handle/123456789/80377