Carbon nanotube memory devices with high-κ gate dielectrics
In this thesis the memory effect and negative differential resistance (NDR) rising from the hysteresis present in carbon nanotube field-effect transistors (CNT-FETs) with high-κ gate dielectrics is discussed. A high-yield fabrication method is devel- oped where Hf-based gate dielectrics are used t...
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| Other Authors: | , , , |
| Format: | Doctoral dissertation |
| Language: | eng |
| Published: |
2009
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| Online Access: | https://jyx.jyu.fi/handle/123456789/80377 |