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[{"key": "dc.contributor.advisor", "value": "Niskanen, Kimmo", "language": "", "element": "contributor", "qualifier": "advisor", "schema": "dc"}, {"key": "dc.contributor.advisor", "value": "Javanainen, Arto", "language": "", "element": "contributor", "qualifier": "advisor", "schema": "dc"}, {"key": "dc.contributor.author", "value": "Lahti, Mikko", "language": "", "element": "contributor", "qualifier": "author", "schema": "dc"}, {"key": "dc.date.accessioned", "value": "2021-12-22T05:25:35Z", "language": null, "element": "date", "qualifier": "accessioned", "schema": "dc"}, {"key": "dc.date.available", "value": "2021-12-22T05:25:35Z", "language": null, "element": "date", "qualifier": "available", "schema": "dc"}, {"key": "dc.date.issued", "value": "2021", "language": "", "element": "date", "qualifier": "issued", "schema": "dc"}, {"key": "dc.identifier.uri", "value": "https://jyx.jyu.fi/handle/123456789/79109", "language": null, "element": "identifier", "qualifier": "uri", "schema": "dc"}, {"key": "dc.description.abstract", "value": "Piikarbiditehotransistorit (SiC Power MOSFET) ovat materiaaliominaisuuksiensa puolesta houkutteleva vaihtoehto piipohjaisten tehotransistorien korvaajiksi kriittisiss\u00e4 sovelluksissa, kuten satelliiteissa, ydinvoimaloissa ja sairaaloissa. Kaikissa n\u00e4iss\u00e4 paikoissa esiintyy s\u00e4teily\u00e4, joka voi vaikuttaa tehotransistorin toimintavarmuuteen. S\u00e4teilyn aiheuttamia yksihiukkasvaurioita on tutkittu jo jonkin verran, mutta kokonaisionisaation aiheuttamat vauriot ovat v\u00e4hemm\u00e4n tutkittuja piikarbidikomponenteissa. T\u00e4ss\u00e4 pro gradu-tutkielmassa keskityt\u00e4\u00e4nkin tutkimaan toimintavarmuutta t\u00e4m\u00e4n kaltaisten kumuloituvien vaurioiden kautta.\n\nPiikarbiditehotransistorien toimintavarmuutta tutkittiin vertaamalla ei-s\u00e4teilytettyj\u00e4 ja s\u00e4teilytettyj\u00e4 tehotransistoreja kesken\u00e4\u00e4n. S\u00e4teilyn\u00e4 k\u00e4ytettiin 20 MeV elektroneita ja s\u00e4teilyannoksena 100 krad (H_2O). Transistorien hajoamista kiihdytettiin k\u00e4ytt\u00e4m\u00e4ll\u00e4 transistorin hilalla ylij\u00e4nnitett\u00e4 ja samalla mitattiin hajoamiseen tarvittava varaus (Charge-to-Breakdown, Q_{BD}). Ylij\u00e4nnittein\u00e4 k\u00e4ytettiin kahta eri hilaj\u00e4nnitett\u00e4, jotka olivat 35,5 V ja 38,3 V. Hilaj\u00e4nnitteen ollessa 35,5 V Q_{BD} ei-s\u00e4teilytetylle transistoriryhm\u00e4lle oli (0,287 \\pm 0,015) C ja s\u00e4teilytetylle (0,218 \\pm 0,009) C. Kun hilaj\u00e4nnite oli taas 38,3 V, niin Q_{BD} ei-s\u00e4teilytetylle ryhm\u00e4lle oli (0,025 \\pm 0,005) C ja s\u00e4teilytetty (0,017 \\pm 0,004) C. Pienemm\u00e4ll\u00e4 hilaj\u00e4nnitteell\u00e4 rasittaessa havaitaan s\u00e4teilyn aiheuttama toimintavarmuuden aleneminen, mutta isommalla hilaj\u00e4nnitteell\u00e4 ei.\n\nToimintavarmuuden lis\u00e4ksi tutkittiin s\u00e4teilyn vaikutusta transistorien virta-j\u00e4nnite-k\u00e4ytt\u00e4ytymiseen. Elektronis\u00e4teilyn vaikutuksesta kynnysj\u00e4nnitteen muutokset s\u00e4teilytetyill\u00e4 transistoriryhmill\u00e4 olivat (0,141 \\pm 0,006) V ja (0,174 \\pm 0,009) V.", "language": "fi", "element": "description", "qualifier": "abstract", "schema": "dc"}, {"key": "dc.description.abstract", "value": "Material properties of silicon carbide power MOSFETs are an intriguing alternative to silicon based power MOSFETs in critical applications such as in satellites, nuclear powerplants and hospitals. In all of these examples radiation is present which can have an effect on MOSFET reliability. Radiation caused single-effect upsets have already been studied to some extent but total ionizing dose effects are less known in SiC components. In this Master's Thesis we study this total ionizing dose effect.\n\nReliability of silicon carbide power MOSFETs were studied by comparing not irradiated and irradiated transistors. During radiation, components were exposed to 20 MeV electron beam with a radiation dose of 100 krad (H_2O). Breakdown of transistors were accelerated by using overdrive voltage in transistor's gate and at the same time, charge-to-breakdown (Q_{BD}) was measured. As overdrive voltage we used two different gate voltages, 35,5 V and 38,3 V. When gate voltage was 35,5 V Q_{BD} for not irradiated transistor group was (0,287 \\pm 0,015) C and for irradiated (0,218 \\pm 0,009) C. On the other hand, when gate voltage was 38,3 V Q_{BD} for not irradiated group was (0,025 \\pm 0,005) C and for irradiated (0,017 \\pm 0,004) C. With the smaller gate voltage transistors groups can be differentiated from each other but with higher gate voltage this was not possible.\n\nIn addition to Q_{BD} measurements, threshold voltage of power transistors was also measured. It was noticed that threshold voltage changes by the effect of electron irradiation. Threshold voltages changed by (0,141 \\pm 0,006) V and (0,174 \\pm 0,009) V in irradiated transistor groups.", "language": "en", "element": "description", "qualifier": "abstract", "schema": "dc"}, {"key": "dc.description.provenance", "value": "Submitted by Miia Hakanen (mihakane@jyu.fi) on 2021-12-22T05:25:35Z\nNo. of bitstreams: 0", "language": "en", "element": "description", "qualifier": "provenance", "schema": "dc"}, {"key": "dc.description.provenance", "value": "Made available in DSpace on 2021-12-22T05:25:35Z (GMT). No. of bitstreams: 0\n Previous issue date: 2021", "language": "en", "element": "description", "qualifier": "provenance", "schema": "dc"}, {"key": "dc.format.extent", "value": "68", "language": "", "element": "format", "qualifier": "extent", "schema": "dc"}, {"key": "dc.format.mimetype", "value": "application/pdf", "language": null, "element": "format", "qualifier": "mimetype", "schema": "dc"}, {"key": "dc.language.iso", "value": "fin", "language": null, "element": "language", "qualifier": "iso", "schema": "dc"}, {"key": "dc.rights", "value": "In Copyright", "language": "en", "element": "rights", "qualifier": null, "schema": "dc"}, {"key": "dc.subject.other", "value": "tehotransistori", "language": "", "element": "subject", "qualifier": "other", "schema": "dc"}, {"key": "dc.subject.other", "value": "MOSFET", "language": "", "element": "subject", "qualifier": "other", "schema": "dc"}, {"key": "dc.subject.other", "value": "SiC", "language": "", "element": "subject", "qualifier": "other", "schema": "dc"}, {"key": "dc.subject.other", "value": "piikarbidi", "language": "", "element": "subject", "qualifier": "other", "schema": "dc"}, {"key": "dc.subject.other", "value": "kynnysj\u00e4nnite", "language": "", "element": "subject", "qualifier": "other", "schema": "dc"}, {"key": "dc.subject.other", "value": "s\u00e4teily-ymp\u00e4rist\u00f6", "language": "", "element": "subject", "qualifier": "other", "schema": "dc"}, {"key": "dc.title", "value": "Elektronis\u00e4teilyn vaikutus piikarbiditehotransistorien toimintavarmuuteen", "language": "", "element": "title", "qualifier": null, "schema": "dc"}, {"key": "dc.type", "value": "master thesis", "language": null, "element": "type", "qualifier": null, "schema": "dc"}, {"key": "dc.identifier.urn", "value": "URN:NBN:fi:jyu-202112226091", "language": "", "element": "identifier", "qualifier": "urn", "schema": "dc"}, {"key": "dc.type.ontasot", "value": "Pro gradu -tutkielma", "language": "fi", "element": "type", "qualifier": "ontasot", "schema": "dc"}, {"key": "dc.type.ontasot", "value": "Master\u2019s thesis", "language": "en", "element": "type", "qualifier": "ontasot", "schema": "dc"}, {"key": "dc.contributor.faculty", "value": "Matemaattis-luonnontieteellinen tiedekunta", "language": "fi", "element": "contributor", "qualifier": "faculty", "schema": "dc"}, {"key": "dc.contributor.faculty", "value": "Faculty of Sciences", "language": "en", "element": "contributor", "qualifier": "faculty", "schema": "dc"}, {"key": "dc.contributor.department", "value": "Fysiikan laitos", "language": "fi", "element": "contributor", "qualifier": "department", "schema": "dc"}, {"key": "dc.contributor.department", "value": "Department of Physics", "language": "en", "element": "contributor", "qualifier": "department", "schema": "dc"}, {"key": "dc.contributor.organization", "value": "Jyv\u00e4skyl\u00e4n yliopisto", "language": "fi", "element": "contributor", "qualifier": "organization", "schema": "dc"}, {"key": "dc.contributor.organization", "value": "University of Jyv\u00e4skyl\u00e4", "language": "en", "element": "contributor", "qualifier": "organization", "schema": "dc"}, {"key": "dc.subject.discipline", "value": "Fysiikka", "language": "fi", "element": "subject", "qualifier": "discipline", "schema": "dc"}, {"key": "dc.subject.discipline", "value": "Physics", "language": "en", "element": "subject", "qualifier": "discipline", "schema": "dc"}, {"key": "yvv.contractresearch.funding", "value": "0", "language": "", "element": "contractresearch", "qualifier": "funding", "schema": "yvv"}, {"key": "dc.type.coar", "value": "http://purl.org/coar/resource_type/c_bdcc", "language": null, "element": "type", "qualifier": "coar", "schema": "dc"}, {"key": "dc.rights.accesslevel", "value": "openAccess", "language": null, "element": "rights", "qualifier": "accesslevel", "schema": "dc"}, {"key": "dc.type.publication", "value": "masterThesis", "language": null, "element": "type", "qualifier": "publication", "schema": "dc"}, {"key": "dc.subject.oppiainekoodi", "value": "4021", "language": "", "element": "subject", "qualifier": "oppiainekoodi", "schema": "dc"}, {"key": "dc.subject.yso", "value": "transistorit", "language": null, "element": "subject", "qualifier": "yso", "schema": "dc"}, {"key": "dc.subject.yso", "value": "s\u00e4teily", "language": null, "element": "subject", "qualifier": "yso", "schema": "dc"}, {"key": "dc.subject.yso", "value": "puolijohteet", "language": null, "element": "subject", "qualifier": "yso", "schema": "dc"}, {"key": "dc.subject.yso", "value": "fysiikka", "language": null, "element": "subject", "qualifier": "yso", "schema": "dc"}, {"key": "dc.format.content", "value": "fulltext", "language": null, "element": "format", "qualifier": "content", "schema": "dc"}, {"key": "dc.rights.url", "value": "https://rightsstatements.org/page/InC/1.0/", "language": null, "element": "rights", "qualifier": "url", "schema": "dc"}, {"key": "dc.type.okm", "value": "G2", "language": null, "element": "type", "qualifier": "okm", "schema": "dc"}]
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