Ultra-flat giant grain Cu film atop α-Al2O3 (0001) for apCVD synthesis of graphene
Graphene microelectronic devices are still in the research phase. Consistent production of such small-scale structures requires increasingly higher quality graphene. Commonly, graphene is grown by chemical vapor deposition (CVD) on the surface of a substrate catalyst. Defects on the catalyst are...
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| Other Authors: | , , , , , |
| Format: | Master's thesis |
| Language: | eng |
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2018
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| Subjects: | |
| Online Access: | https://jyx.jyu.fi/handle/123456789/59079 |
| Summary: | Graphene microelectronic devices are still in the research phase. Consistent production of such small-scale structures requires increasingly higher quality graphene. Commonly, graphene is grown by chemical vapor deposition (CVD) on the surface of a substrate catalyst. Defects on the catalyst are known to generate corresponding defects in the CVD graphene grown atop it. The current study seeks to produce a wafer scale single-crystal Cu thin film supported by Al2O3 which is durable enough for apCVD graphene production.
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