Annealing study of bismuth thin films
Electrical and magnetotransport properties of thin bismuth films were studied in the range of 4.2 - 295 K in applied magnetic fields up to 3.5 T. The bismuth films were deposited on mica and SiO substrates and subjected to post deposition thermal annealing in order to improve the crystal structure....
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| Muut tekijät: | , , , , , |
| Aineistotyyppi: | Pro gradu |
| Kieli: | eng |
| Julkaistu: |
2010
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| Aiheet: | |
| Linkit: | https://jyx.jyu.fi/handle/123456789/24486 |
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