THF cleaning for PMMA residue removal from graphene

In this work the effectiveness on tetrahydrofuran cleaning on PMMA residues left behind from the polymer supported transfer process of CVD grown graphene and its ability to remove surface doping from graphene were studied. The electronic properties of the studied graphene Hall bar devices fabricated...

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Main Author: Suutari, Sirkka
Other Authors: Matemaattis-luonnontieteellinen tiedekunta, Faculty of Sciences, Fysiikan laitos, Department of Physics, Jyväskylän yliopisto, University of Jyväskylä
Format: Master's thesis
Language:eng
Published: 2024
Subjects:
Online Access: https://jyx.jyu.fi/handle/123456789/97060
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author Suutari, Sirkka
author2 Matemaattis-luonnontieteellinen tiedekunta Faculty of Sciences Fysiikan laitos Department of Physics Jyväskylän yliopisto University of Jyväskylä
author_facet Suutari, Sirkka Matemaattis-luonnontieteellinen tiedekunta Faculty of Sciences Fysiikan laitos Department of Physics Jyväskylän yliopisto University of Jyväskylä Suutari, Sirkka Matemaattis-luonnontieteellinen tiedekunta Faculty of Sciences Fysiikan laitos Department of Physics Jyväskylän yliopisto University of Jyväskylä
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description In this work the effectiveness on tetrahydrofuran cleaning on PMMA residues left behind from the polymer supported transfer process of CVD grown graphene and its ability to remove surface doping from graphene were studied. The electronic properties of the studied graphene Hall bar devices fabricated on a silicon dioxide substrate were charted during different points of the cleaning process. The amount of surface doping and the quality of the graphene was estimated using Raman spectroscopy and the amount of PMMA residues was estimated using atomic force microscopy. The electrical measurements and Raman spectroscopy showed that before cleaning the devices were highly p-doped and that the doping was reduced as a result of the cleaning. The suitability studied cleaning process for PMMA residue removal could not be conclusively estimated from the obtained results, but the process showed promise for removing ambient surface doping.
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The electronic\nproperties of the studied graphene Hall bar devices fabricated on a silicon dioxide\nsubstrate were charted during different points of the cleaning process. The amount\nof surface doping and the quality of the graphene was estimated using Raman\nspectroscopy and the amount of PMMA residues was estimated using atomic force\nmicroscopy. The electrical measurements and Raman spectroscopy showed that\nbefore cleaning the devices were highly p-doped and that the doping was reduced\nas a result of the cleaning. 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spellingShingle Suutari, Sirkka THF cleaning for PMMA residue removal from graphene tetrahydrofuran PMMA Soveltava fysiikka Applied Physics 4023 grafeeni kemiallinen kaasufaasipinnoitus graphene chemical vapour deposition
title THF cleaning for PMMA residue removal from graphene
title_full THF cleaning for PMMA residue removal from graphene
title_fullStr THF cleaning for PMMA residue removal from graphene THF cleaning for PMMA residue removal from graphene
title_full_unstemmed THF cleaning for PMMA residue removal from graphene THF cleaning for PMMA residue removal from graphene
title_short THF cleaning for PMMA residue removal from graphene
title_sort thf cleaning for pmma residue removal from graphene
title_txtP THF cleaning for PMMA residue removal from graphene
topic tetrahydrofuran PMMA Soveltava fysiikka Applied Physics 4023 grafeeni kemiallinen kaasufaasipinnoitus graphene chemical vapour deposition
topic_facet 4023 Applied Physics PMMA Soveltava fysiikka chemical vapour deposition grafeeni graphene kemiallinen kaasufaasipinnoitus tetrahydrofuran
url https://jyx.jyu.fi/handle/123456789/97060 http://www.urn.fi/URN:NBN:fi:jyu-202409135939
work_keys_str_mv AT suutarisirkka thfcleaningforpmmaresidueremovalfromgraphene