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[{"key": "dc.contributor.advisor", "value": "Niskanen, Kimmo", "language": "", "element": "contributor", "qualifier": "advisor", "schema": "dc"}, {"key": "dc.contributor.advisor", "value": "Kettunen, Heikki", "language": "", "element": "contributor", "qualifier": "advisor", "schema": "dc"}, {"key": "dc.contributor.author", "value": "Huuskonen, Henrik", "language": "", "element": "contributor", "qualifier": "author", "schema": "dc"}, {"key": "dc.date.accessioned", "value": "2023-01-03T06:17:19Z", "language": null, "element": "date", "qualifier": "accessioned", "schema": "dc"}, {"key": "dc.date.available", "value": "2023-01-03T06:17:19Z", "language": null, "element": "date", "qualifier": "available", "schema": "dc"}, {"key": "dc.date.issued", "value": "2023", "language": "", "element": "date", "qualifier": "issued", "schema": "dc"}, {"key": "dc.identifier.uri", "value": "https://jyx.jyu.fi/handle/123456789/84667", "language": null, "element": "identifier", "qualifier": "uri", "schema": "dc"}, {"key": "dc.description.abstract", "value": "S\u00e4teily vaikuttaa elektroniikan komponentteihin monilla tavoilla. T\u00e4ss\u00e4 ty\u00f6ss\u00e4 tutkittiin mahdollisuutta k\u00e4ytt\u00e4\u00e4 kaupallista piikarbidi Schottky-diodia s\u00e4teilyilmaisimena.\nTulosten perusteella pyrittiin saamaan datapisteisiin sopiva sovitus, jolla kyett\u00e4isiin\nkuvaamaan k\u00e4ytt\u00e4ytymist\u00e4.\n\nSchottky-diodin metallin ja puolijohteen liitoksessa on tyhjennysalue, jossa ei ole\nvapaita varauksenkuljettajia. Tyhjennysalueen leveys on riippuvainen komponenttiin\nkohdistetun j\u00e4nnitteen neli\u00f6juuresta. Ionisoivan s\u00e4teilyn kulkiessa diodin l\u00e4pi syntyy\nelektroni-aukko pareja, jotka s\u00e4hk\u00f6kent\u00e4n vaikutuksesta erkanevat. N\u00e4m\u00e4 pystyt\u00e4\u00e4n havaitsemaan virtana laitteen liittimill\u00e4, t\u00e4ten mahdollistaen laitteen k\u00e4yt\u00f6n\ns\u00e4teilynilmaisimena. Virtaa mittaamalla kyet\u00e4\u00e4n havaitsemaan s\u00e4teily.\n\nMittauksissa tutkittiin estosuuntaisien Schottky-diodien virtak\u00e4ytt\u00e4ytymist\u00e4\nelektronis\u00e4teilyn alaisena. Elektronisuihku kohdistettiin lineaarikiihdyttimell\u00e4, ja\nsek\u00e4 kohdistettu j\u00e4nnite ett\u00e4 mitattu virta tehtiin Keihtley 2470 laitteella. Diodien\ns\u00e4teilyvastetta tutkittiin muuttaen komponenttiin kohdistettua j\u00e4nnitett\u00e4, elektronisuihkun annosnopeutta sek\u00e4 elektronien energiaa.\n\nDiodit omaavat selv\u00e4n vasteen s\u00e4teilylle. S\u00e4teilyst\u00e4 aiheutuvan virran suuruus\nkasvaa sek\u00e4 j\u00e4nnitteen ett\u00e4 annosnopeuden kasvaessa. Suuremmilla j\u00e4nnitteill\u00e4\nvirran suuruuden virhe kasvaa merkitt\u00e4v\u00e4sti. Virran ja tyhjennysalueen leveyden\nsuhdetta pyrittiin kuvaamaan sovituksella, jossa tyhjennysalueen leveys kerrottiin\nsovitusparametrill\u00e4. Virran ja tyhjennysalueen leveytt\u00e4 on huono kuvata vain yhdell\u00e4 parametrill\u00e4. On todenn\u00e4k\u00f6ist\u00e4, ett\u00e4 virran arvoon vaikuttavat muutkin ilmi\u00f6t\ntyhjennysalueen leveyden lis\u00e4ksi. Ionisaatiovirran ja annosnopeuden suhdetta kuvattiin potenssilailla. Kyseinen sovitus k\u00e4vi pienempien j\u00e4nnitteiden dataan hyvin, ja\nsovitus heikkeni suuremmilla j\u00e4nnitteill\u00e4. Elektronien energialla ei havaittu olevan\nmerkityst\u00e4 ionisaatiovirran suuruuteen.\n\nSek\u00e4 virran virheen ett\u00e4 sovitusten sopivuuden perusteella pienempien j\u00e4nnitteiden k\u00e4ytt\u00f6 on suositeltavaa sovelluksissa. Elektronien energia ei vaikuta virtaan sill\u00e4\nv\u00e4hempikin energia on tarpeeksi s\u00e4teilyn p\u00e4\u00e4st\u00e4kseen komponentin l\u00e4pi ionisoiden\nainetta. Diodien k\u00e4ytt\u00e4ytymisess\u00e4 ei havaittu muutoksia s\u00e4teilytyksen j\u00e4lkeen.", "language": "fi", "element": "description", "qualifier": "abstract", "schema": "dc"}, {"key": "dc.description.abstract", "value": "Radiation affects electronic components in many ways. In this work the possibility\nof using a commercial silicon carbide Schottky-diode as a radiation detector was\ninvestigated. A fit that would describe the behavior was attempted to be applied to\nthe data based on the results.\n\nThere is a depletion region in Schottky diodes near the junction between metal and\nsemiconductor, where there are no free charge carriers. The width of the depletion\nlayer is dependent on the square root of the voltage applied to the component. As\nionizing radiation moves through the diode, electron-hole pairs are formed, which\ndue to the effect of electric field are separated, which can be observed as a current\nat the device terminals and therefore allows the device to be used as a radiation\ndetector.\n\nDuring the measurements, the current behaviour of reverse biased Schottky-diodes\nunder the electron radiation were investigated. The pulse was applied with a linear\naccelerator, an both the applied voltage and measured current was done with the\ndevice Keithley 2470. The radiation response of the diodes was investigated using\ndifferent bias voltages, pulse dose rates and electron energies.\n\nThe diodes have a distinct response to radiation. The radiation induced current\nincreases with increasing voltage and dose rate. Higher voltage causes a significantly\nhigher error in the measured current. The relation between the current and depletion\nlayer width was attempted to be described with a fit, where the width was multiplied\nwith a fit parameter. The relation between current and depletion layer width is not\nsuitable to be described with only one parameter. It is likely that other phenomena\naffect the current in addition to the layer width. The relation between current and\ndose rate was described with a power law. The fit was good with lower voltages\nbut worsened with higher. The energy of the electrons had no effect on the ionized current.\n\nBased on both the error of the current and the fitting of the models, it is\nrecommended to use lower voltages in applications. The energy of the electrons\ndoes not affect the current because even lesser energy is enough for the radiation to\npenetrate the component ionizing matter. There were no differences noticed in the\nbehaviors of the diodes after radiation.", "language": "en", "element": "description", "qualifier": "abstract", "schema": "dc"}, {"key": "dc.description.provenance", "value": "Submitted by Paivi Vuorio (paelvuor@jyu.fi) on 2023-01-03T06:17:19Z\nNo. of bitstreams: 0", "language": "en", "element": "description", "qualifier": "provenance", "schema": "dc"}, {"key": "dc.description.provenance", "value": "Made available in DSpace on 2023-01-03T06:17:19Z (GMT). No. of bitstreams: 0\n Previous issue date: 2023", "language": "en", "element": "description", "qualifier": "provenance", "schema": "dc"}, {"key": "dc.format.extent", "value": "72", "language": "", "element": "format", "qualifier": "extent", "schema": "dc"}, {"key": "dc.format.mimetype", "value": "application/pdf", "language": null, "element": "format", "qualifier": "mimetype", "schema": "dc"}, {"key": "dc.language.iso", "value": "fin", "language": null, "element": "language", "qualifier": "iso", "schema": "dc"}, {"key": "dc.rights", "value": "In Copyright", "language": null, "element": "rights", "qualifier": null, "schema": "dc"}, {"key": "dc.subject.other", "value": "Schottky-diodi", "language": "", "element": "subject", "qualifier": "other", "schema": "dc"}, {"key": "dc.subject.other", "value": "elektronis\u00e4teily", "language": "", "element": "subject", "qualifier": "other", "schema": "dc"}, {"key": "dc.subject.other", "value": "piikarbidi", "language": "", "element": "subject", "qualifier": "other", "schema": "dc"}, {"key": "dc.title", "value": "Piikarbidi Schottky-diodi s\u00e4teilynilmaisimena", "language": "", "element": "title", "qualifier": null, "schema": "dc"}, {"key": "dc.type", "value": "master thesis", "language": null, "element": "type", "qualifier": null, "schema": "dc"}, {"key": "dc.identifier.urn", "value": "URN:NBN:fi:jyu-202301031027", "language": "", "element": "identifier", "qualifier": "urn", "schema": "dc"}, {"key": "dc.type.ontasot", "value": "Pro gradu -tutkielma", "language": "fi", "element": "type", "qualifier": "ontasot", "schema": "dc"}, {"key": "dc.type.ontasot", "value": "Master\u2019s thesis", "language": "en", "element": "type", "qualifier": "ontasot", "schema": "dc"}, {"key": "dc.contributor.faculty", "value": "Matemaattis-luonnontieteellinen tiedekunta", "language": "fi", "element": "contributor", "qualifier": "faculty", "schema": "dc"}, {"key": "dc.contributor.faculty", "value": "Faculty of Sciences", "language": "en", "element": "contributor", "qualifier": "faculty", "schema": "dc"}, {"key": "dc.contributor.department", "value": "Fysiikan laitos", "language": "fi", "element": "contributor", "qualifier": "department", "schema": "dc"}, {"key": "dc.contributor.department", "value": "Department of Physics", "language": "en", "element": "contributor", "qualifier": "department", "schema": "dc"}, {"key": "dc.contributor.organization", "value": "Jyv\u00e4skyl\u00e4n yliopisto", "language": "fi", "element": "contributor", "qualifier": "organization", "schema": "dc"}, {"key": "dc.contributor.organization", "value": "University of Jyv\u00e4skyl\u00e4", "language": "en", "element": "contributor", "qualifier": "organization", "schema": "dc"}, {"key": "dc.subject.discipline", "value": "Fysiikka", "language": "fi", "element": "subject", "qualifier": "discipline", "schema": "dc"}, {"key": "dc.subject.discipline", "value": "Physics", "language": "en", "element": "subject", "qualifier": "discipline", "schema": "dc"}, {"key": "yvv.contractresearch.funding", "value": "0", "language": "", "element": "contractresearch", "qualifier": "funding", "schema": "yvv"}, {"key": "dc.type.coar", "value": "http://purl.org/coar/resource_type/c_bdcc", "language": null, "element": "type", "qualifier": "coar", "schema": "dc"}, {"key": "dc.rights.copyright", "value": "\u00a9 The Author(s)", "language": null, "element": "rights", "qualifier": "copyright", "schema": "dc"}, {"key": "dc.rights.accesslevel", "value": "openAccess", "language": null, "element": "rights", "qualifier": "accesslevel", "schema": "dc"}, {"key": "dc.type.publication", "value": "masterThesis", "language": null, "element": "type", "qualifier": "publication", "schema": "dc"}, {"key": "dc.subject.oppiainekoodi", "value": "4021", "language": "", "element": "subject", "qualifier": "oppiainekoodi", "schema": "dc"}, {"key": "dc.subject.yso", "value": "s\u00e4teily", "language": null, "element": "subject", "qualifier": "yso", "schema": "dc"}, {"key": "dc.subject.yso", "value": "puolijohteet", "language": null, "element": "subject", "qualifier": "yso", "schema": "dc"}, {"key": "dc.format.content", "value": "fulltext", "language": null, "element": "format", "qualifier": "content", "schema": "dc"}, {"key": "dc.rights.url", "value": "https://rightsstatements.org/page/InC/1.0/", "language": null, "element": "rights", "qualifier": "url", "schema": "dc"}, {"key": "dc.type.okm", "value": "G2", "language": null, "element": "type", "qualifier": "okm", "schema": "dc"}]
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