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[{"key": "dc.contributor.advisor", "value": "Javanainen, Arto", "language": "", "element": "contributor", "qualifier": "advisor", "schema": "dc"}, {"key": "dc.contributor.author", "value": "Tuominen, Jaakko", "language": "", "element": "contributor", "qualifier": "author", "schema": "dc"}, {"key": "dc.date.accessioned", "value": "2019-04-11T06:27:30Z", "language": null, "element": "date", "qualifier": "accessioned", "schema": "dc"}, {"key": "dc.date.available", "value": "2019-04-11T06:27:30Z", "language": null, "element": "date", "qualifier": "available", "schema": "dc"}, {"key": "dc.date.issued", "value": "2018", "language": "", "element": "date", "qualifier": "issued", "schema": "dc"}, {"key": "dc.identifier.uri", "value": "https://jyx.jyu.fi/handle/123456789/63461", "language": null, "element": "identifier", "qualifier": "uri", "schema": "dc"}, {"key": "dc.description.abstract", "value": "Piikarbidi (SiC) on verrattain uusi puolijohdemateriaali, josta voidaan valmistaa kest\u00e4vi\u00e4 tehotransistoreja. Piikarbiditehotransistorien s\u00e4teilynkestoa ei ole viel\u00e4 kattavasti tutkittu, mutta raskasionitesteiss\u00e4 ne ovat osoittautuneet yll\u00e4tt\u00e4v\u00e4n herkiksi vaurioitumaan. T\u00e4ss\u00e4 opinn\u00e4ytety\u00f6ss\u00e4 tutkin kahden eri piikarbidipohjaisen tehotransistorin s\u00e4teilynkest\u00e4vyytt\u00e4 20 MeV elektroneilla s\u00e4teilyannoksen ollessa 1000 rad(H2O)/min. Tutkimuksessa selvitet\u00e4\u00e4n, kuinka voimakkaassa s\u00e4teilyss\u00e4 transistorit pysyv\u00e4t viel\u00e4 toimintakuntoisena ja miten transistorin kynnysj\u00e4nnite muuttuu s\u00e4teilytyksess\u00e4. Kaikki tutkitut transistorit s\u00e4ilyiv\u00e4t toimintakuntoisena testausolosuhteissa. Wolfspeed:in C2M0080120D 1200-V SiC tehotransitorin kynnysj\u00e4nnite muuttui s\u00e4teilytett\u00e4ess\u00e4 (\u22122,0 \u00b1 0,2) mV/krad ja saman valmistajan C2M1000170D 1700-V SiC tehotransistorin kynnysj\u00e4nnitteen muutos oli (\u22121,33 \u00b1 0,06) mV/krad. Kynnysj\u00e4nnitteiden muutos voidaan selitt\u00e4\u00e4 s\u00e4teilytyksess\u00e4 hilaoksidiin kertyneen varauksen avulla. Sen sijaan kynnysj\u00e4nnitteen l\u00e4mp\u00f6tilariippuvuus ei muuttunut s\u00e4teilytyksen vaikutuksesta. Lis\u00e4ksi t\u00e4ss\u00e4 opinn\u00e4ytety\u00f6ss\u00e4 tehd\u00e4\u00e4n lyhyt katsaus maapallon ja avaruuden s\u00e4teily-ymp\u00e4rist\u00f6\u00f6n sek\u00e4 esitell\u00e4\u00e4n, miss\u00e4 energeettisi\u00e4 elektroneita esiintyy luonnostaan.", "language": "fi", "element": "description", "qualifier": "abstract", "schema": "dc"}, {"key": "dc.description.abstract", "value": "Silicon carbide (SiC) is a relatively new semiconductor material which can be used to produce durable power devices. Their irradiation durability has not yet been extensively studied but they have been suprisingly sensitive to damage in heavy ion tests. In this thesis I investigate the irradiation durability of two different silicon carbide power MOSFETs with 20 MeV electron irradiation and dose rate of 1000 rad(H2O)/min. The study shows how well MOSFETs remain in operation in intense electron irradiation and how the threshold voltage of MOSFETs changes during irradiation. All investigated MOSFETs remained operational under test conditions. The threshold voltage of the Wolfspeed C2M0080120D 1200-V SiC power MOSFET changed (\u22122.0 \u00b1 0.2) mV/krad during irradiation. The threshold voltage change of the same manufacture\u2019s C2M1000170D 1700-V SiC power MOSFET was (\u22121.33 \u00b1 0.06) mV/krad. The change in the threshold voltages can be explained by the charge accumulated in the gate oxide during irradiation. The temperature dependency of the threshold voltage did not change due to irradiation. In addition this thesis provides a brief overview to the radiation environment on Earth and in space and presents where high energy electrons occur naturally.", "language": "en", "element": "description", "qualifier": "abstract", "schema": "dc"}, {"key": "dc.description.provenance", "value": "Submitted by Paivi Vuorio (paelvuor@jyu.fi) on 2019-04-11T06:27:30Z\nNo. of bitstreams: 0", "language": "en", "element": "description", "qualifier": "provenance", "schema": "dc"}, {"key": "dc.description.provenance", "value": "Made available in DSpace on 2019-04-11T06:27:30Z (GMT). No. of bitstreams: 0\n Previous issue date: 2018", "language": "en", "element": "description", "qualifier": "provenance", "schema": "dc"}, {"key": "dc.format.extent", "value": "60", "language": "", "element": "format", "qualifier": "extent", "schema": "dc"}, {"key": "dc.language.iso", "value": "fin", "language": null, "element": "language", "qualifier": "iso", "schema": "dc"}, {"key": "dc.rights", "value": "In Copyright", "language": "en", "element": "rights", "qualifier": null, "schema": "dc"}, {"key": "dc.title", "value": "20 MeV elektronis\u00e4teilyn vaikutus piikarbiditehotransistoreihin", "language": "", "element": "title", "qualifier": null, "schema": "dc"}, {"key": "dc.type", "value": "master thesis", "language": null, "element": "type", "qualifier": null, "schema": "dc"}, {"key": "dc.identifier.urn", "value": "URN:NBN:fi:jyu-201904112145", "language": "", "element": "identifier", "qualifier": "urn", "schema": "dc"}, {"key": "dc.type.ontasot", "value": "Master\u2019s thesis", "language": "en", "element": "type", "qualifier": "ontasot", "schema": "dc"}, {"key": "dc.type.ontasot", "value": "Pro gradu -tutkielma", "language": "fi", "element": "type", "qualifier": "ontasot", "schema": "dc"}, {"key": "dc.contributor.faculty", "value": "Matemaattis-luonnontieteellinen tiedekunta", "language": "fi", "element": "contributor", "qualifier": "faculty", "schema": "dc"}, {"key": "dc.contributor.faculty", "value": "Faculty of Sciences", "language": "en", "element": "contributor", "qualifier": "faculty", "schema": "dc"}, {"key": "dc.contributor.department", "value": "Fysiikan laitos", "language": "fi", "element": "contributor", "qualifier": "department", "schema": "dc"}, {"key": "dc.contributor.department", "value": "Department of Physics", "language": "en", "element": "contributor", "qualifier": "department", "schema": "dc"}, {"key": "dc.contributor.organization", "value": "Jyv\u00e4skyl\u00e4n yliopisto", "language": "fi", "element": "contributor", "qualifier": "organization", "schema": "dc"}, {"key": "dc.contributor.organization", "value": "University of Jyv\u00e4skyl\u00e4", "language": "en", "element": "contributor", "qualifier": "organization", "schema": "dc"}, {"key": "dc.subject.discipline", "value": "Fysiikka", "language": "fi", "element": "subject", "qualifier": "discipline", "schema": "dc"}, {"key": "dc.subject.discipline", "value": "Physics", "language": "en", "element": "subject", "qualifier": "discipline", "schema": "dc"}, {"key": "yvv.contractresearch.funding", "value": "0", "language": "", "element": "contractresearch", "qualifier": "funding", "schema": "yvv"}, {"key": "dc.type.coar", "value": "http://purl.org/coar/resource_type/c_bdcc", "language": null, "element": "type", "qualifier": "coar", "schema": "dc"}, {"key": "dc.rights.accesslevel", "value": "openAccess", "language": null, "element": "rights", "qualifier": "accesslevel", "schema": "dc"}, {"key": "dc.type.publication", "value": "masterThesis", "language": null, "element": "type", "qualifier": "publication", "schema": "dc"}, {"key": "dc.subject.oppiainekoodi", "value": "4021", "language": "", "element": "subject", "qualifier": "oppiainekoodi", "schema": "dc"}, {"key": "dc.subject.yso", "value": "transistorit", "language": null, "element": "subject", "qualifier": "yso", "schema": "dc"}, {"key": "dc.subject.yso", "value": "s\u00e4teilytys", "language": null, "element": "subject", "qualifier": "yso", "schema": "dc"}, {"key": "dc.subject.yso", "value": "s\u00e4teilyannokset", "language": null, "element": "subject", "qualifier": "yso", "schema": "dc"}, {"key": "dc.subject.yso", "value": "s\u00e4teily", "language": null, "element": "subject", "qualifier": "yso", "schema": "dc"}, {"key": "dc.subject.yso", "value": "elektronit", "language": null, "element": "subject", "qualifier": "yso", "schema": "dc"}, {"key": "dc.subject.yso", "value": "kosminen s\u00e4teily", "language": null, "element": "subject", "qualifier": "yso", "schema": "dc"}, {"key": "dc.subject.yso", "value": "puolijohteet", "language": null, "element": "subject", "qualifier": "yso", "schema": "dc"}, {"key": "dc.subject.yso", "value": "ionisoiva s\u00e4teily", "language": null, "element": "subject", "qualifier": "yso", "schema": "dc"}, {"key": "dc.subject.yso", "value": "l\u00e4mp\u00f6tila", "language": null, "element": "subject", "qualifier": "yso", "schema": "dc"}, {"key": "dc.subject.yso", "value": "elektroniikkakomponentit", "language": null, "element": "subject", "qualifier": "yso", "schema": "dc"}, {"key": "dc.rights.url", "value": "https://rightsstatements.org/page/InC/1.0/", "language": null, "element": "rights", "qualifier": "url", "schema": "dc"}]
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