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[{"key": "dc.contributor.author", "value": "Hokkanen, Matti", "language": null, "element": "contributor", "qualifier": "author", "schema": "dc"}, {"key": "dc.date.accessioned", "value": "2012-01-02T13:44:45Z", "language": "", "element": "date", "qualifier": "accessioned", "schema": "dc"}, {"key": "dc.date.available", "value": "2012-01-02T13:44:45Z", "language": "", "element": "date", "qualifier": "available", "schema": "dc"}, {"key": "dc.date.issued", "value": "2011", "language": null, "element": "date", "qualifier": "issued", "schema": "dc"}, {"key": "dc.identifier.other", "value": "oai:jykdok.linneanet.fi:1191327", "language": null, "element": "identifier", "qualifier": "other", "schema": "dc"}, {"key": "dc.identifier.uri", "value": "https://jyx.jyu.fi/handle/123456789/37155", "language": "", "element": "identifier", "qualifier": "uri", "schema": "dc"}, {"key": "dc.description.abstract", "value": "Puolijohdeteollisuuden kantavana voimana on alusta saakka ollut mikroprosessorien laskentatehon jatkuva kasvu, mink\u00e4 on sallinut valmistusmenetelmien alituinen tehostuminen. Erityisen merkitt\u00e4v\u00e4ss\u00e4 osassa on ollut yksitt\u00e4isten transistorikomponenttien koon pienentyminen, sek\u00e4 niiden pinta-alatiheyden kasvu substraatilla. On kuitenkin tunnustettu tosiasia, ett\u00e4 sama kehitys ei voi jatkua en\u00e4\u00e4 pitk\u00e4\u00e4n, sill\u00e4 jo nyt toimitaan nykyisten valmistusmenetelmien fysikaalisilla \u00e4\u00e4rirajoilla. Suotuisan kehityksen turvaamiseksi on siis v\u00e4ltt\u00e4m\u00e4t\u00f6nt\u00e4 ottaa k\u00e4ytt\u00f6\u00f6n kokonaan uusia menetelmi\u00e4 ja materiaaleja.\r\n\r\nTutkielmani liittyy hiilinanoputkien (carbon nanotubes, CNTs) k\u00e4ytt\u00f6\u00f6n s\u00e4hk\u00f6isiss\u00e4 komponenteissa, erityisesti kanavatransistoreissa (Field-Effect Transistors,\r\nFETs). Hiilinanoputkilla on mekaanisen stabiilisuutensa ja kemiallisen inerttisyytens\u00e4 lis\u00e4ksi useita hy\u00f6dyllisi\u00e4 s\u00e4hk\u00f6isi\u00e4 ominaisuuksia, joiden vuoksi niill\u00e4 uskotaan olevan merkitt\u00e4v\u00e4 sovelluskohde transistorikomponentteina. Itse komponenttien valmistuksesta on viime vuosien aikana tullut tutkimuksessa rutiininomaista ty\u00f6t\u00e4, ja alalla on yleistynyt suuntaus jossa hiilinanoputket valmistetaan suoraan muutoin valmiiseen komponenttiin. Kuitenkin my\u00f6s ennalta valmisteltuja hiilinanoputkidepositioita k\u00e4ytet\u00e4\u00e4n edelleen runsaasti. T\u00e4ll\u00f6in merkitt\u00e4v\u00e4ksi nousee deposition puhtaus.\r\n\r\nT\u00e4ss\u00e4 tutkielmassa k\u00e4sittelen kehitt\u00e4m\u00e4\u00e4ni hiilinanoputkin\u00e4ytteiden puhdistusmenetelm\u00e4\u00e4, jonka uskon olevan avuksi hiilinanoputkitransistoreiden valmistuksessa. Liikkuvien vesirajapintojen vuorovaikutukseen pinnan partikkeleiden kanssa perustuvalla, yksinkertaisella menetelm\u00e4ll\u00e4 voidaan parantaa hiilinanoputkin\u00e4ytteiden laatua poistamalla niill\u00e4 olevia pallomaisia roskapartikkeleja niin, ett\u00e4 n\u00e4ytteelle viel\u00e4 kuitenkin j\u00e4\u00e4 runsaasti hiilinanoputkia. Esittelen t\u00e4ss\u00e4 menetelm\u00e4n soveltamiseen tarvittavan j\u00e4rjestelyn, sek\u00e4 puhdistuskokeiluissa saamani tulokset sen soveltuvuudesta k\u00e4yt\u00e4nt\u00f6\u00f6n. K\u00e4y ilmi, ett\u00e4 menetelm\u00e4ll\u00e4 voidaan tehokkaasti parantaa hiilinanoputkin\u00e4ytteiden laatua, erityisesti monikerroksisista hiilinanoputkista koostuvien depositioiden. Lis\u00e4ksi menetelm\u00e4\u00e4 voitanee soveltaa nanopartikkeleiden puhdistamiseen pinnoilta my\u00f6s yleisesti.\r\n\r\nItse puhdistusmenetelm\u00e4n kuvailun lis\u00e4ksi annan yleisen johdannon hiilinanoputkiin, sek\u00e4 erityisesti niiden s\u00e4hk\u00f6isiin ominaisuuksiin. T\u00e4m\u00e4n lis\u00e4ksi k\u00e4sittelen partikkeleiden adhesiota pinnoille teoreettisesta n\u00e4k\u00f6kulmasta. Motivoidakseni edell\u00e4 mainittua puhdistusmenetelm\u00e4\u00e4 k\u00e4sittelen my\u00f6s hiilinanoputkipohjaisia transistoreita, ja pyrin selvent\u00e4m\u00e4\u00e4n, milt\u00e4 osin ne poikkeavat perinteisist\u00e4 puolijohdetransistoreista. Lis\u00e4ksi esittelen hiilinanoputkitransistoreiden valmistusta laboratorio-olosuhteissa, sek\u00e4 niiden s\u00e4hk\u00f6isten ominaisuuksien kokeellista m\u00e4\u00e4ritt\u00e4mist\u00e4.", "language": "", "element": "description", "qualifier": "abstract", "schema": "dc"}, {"key": "dc.description.provenance", "value": "Submitted using Plone Publishing form by Matti Hokkanen (majuhokk) on 2012-01-02 13:44:43.272385. Form: Pro gradu -lomake (1 tekij\u00e4) (https://kirjasto.jyu.fi/julkaisut/julkaisulomakkeet/pro-gradu-lomake-1-tekijae). JyX data:", "language": "en", "element": "description", "qualifier": "provenance", "schema": "dc"}, {"key": "dc.description.provenance", "value": "Submitted by jyx lomake-julkaisija (jyx-julkaisija@noreply.fi) on 2012-01-02T13:44:45Z\r\nNo. of bitstreams: 2\r\nURN:NBN:fi:jyu-201201021000.pdf: 3367468 bytes, checksum: 5dda78b5851633745ba9096d7460bdd3 (MD5)\r\nlicense.html: 5108 bytes, checksum: f7dadea60bc689687a144bf46f317d0c (MD5)", "language": "en", "element": "description", "qualifier": "provenance", "schema": "dc"}, {"key": "dc.description.provenance", "value": "Made available in DSpace on 2012-01-02T13:44:45Z (GMT). No. of bitstreams: 2\r\nURN:NBN:fi:jyu-201201021000.pdf: 3367468 bytes, checksum: 5dda78b5851633745ba9096d7460bdd3 (MD5)\r\nlicense.html: 5108 bytes, checksum: f7dadea60bc689687a144bf46f317d0c (MD5)\r\n Previous issue date: 2011", "language": "en", "element": "description", "qualifier": "provenance", "schema": "dc"}, {"key": "dc.format.extent", "value": "53 s.", "language": null, "element": "format", "qualifier": "extent", "schema": "dc"}, {"key": "dc.format.mimetype", "value": "application/pdf", "language": null, "element": "format", "qualifier": "mimetype", "schema": "dc"}, {"key": "dc.language.iso", "value": "fin", "language": null, "element": "language", "qualifier": "iso", "schema": "dc"}, {"key": "dc.rights", "value": "In Copyright", "language": "en", "element": "rights", "qualifier": null, "schema": "dc"}, {"key": "dc.subject.other", "value": "hiilinanoputket", "language": null, "element": "subject", "qualifier": "other", "schema": "dc"}, {"key": "dc.subject.other", "value": "kanavatransistorit", "language": null, "element": "subject", "qualifier": "other", "schema": "dc"}, {"key": "dc.title", "value": "Hiilinanoputkien k\u00e4ytt\u00f6 transistorikomponenteissa : hiilinanoputkin\u00e4ytteiden laadun parantaminen, transistorikomponenttien valmistus sek\u00e4 niiden s\u00e4hk\u00f6iset ominaisuudet", "language": null, "element": "title", "qualifier": null, "schema": "dc"}, {"key": "dc.type", "value": "master thesis", "language": null, "element": "type", "qualifier": null, "schema": "dc"}, {"key": "dc.identifier.urn", "value": "URN:NBN:fi:jyu-201201021000", "language": null, "element": "identifier", "qualifier": "urn", "schema": "dc"}, {"key": "dc.type.dcmitype", "value": "Text", "language": "en", "element": "type", "qualifier": "dcmitype", "schema": "dc"}, {"key": "dc.type.ontasot", "value": "Pro gradu -tutkielma", "language": "fi", "element": "type", "qualifier": "ontasot", "schema": "dc"}, {"key": "dc.type.ontasot", "value": "Master\u2019s thesis", "language": "en", "element": "type", "qualifier": "ontasot", "schema": "dc"}, {"key": "dc.contributor.faculty", "value": "Matemaattis-luonnontieteellinen tiedekunta", "language": "fi", "element": "contributor", "qualifier": "faculty", "schema": "dc"}, {"key": "dc.contributor.faculty", "value": "Faculty of Sciences", "language": "en", "element": "contributor", "qualifier": "faculty", "schema": "dc"}, {"key": "dc.contributor.department", "value": "Fysiikan laitos", "language": "fi", "element": "contributor", "qualifier": "department", "schema": "dc"}, {"key": "dc.contributor.department", "value": "Department of Physics", "language": "en", "element": "contributor", "qualifier": "department", "schema": "dc"}, {"key": "dc.contributor.organization", "value": "University of Jyv\u00e4skyl\u00e4", "language": "en", "element": "contributor", "qualifier": "organization", "schema": "dc"}, {"key": "dc.contributor.organization", "value": "Jyv\u00e4skyl\u00e4n yliopisto", "language": "fi", "element": "contributor", "qualifier": "organization", "schema": "dc"}, {"key": "dc.subject.discipline", "value": "Fysiikka", "language": "fi", "element": "subject", "qualifier": "discipline", "schema": "dc"}, {"key": "dc.subject.discipline", "value": "Physics", "language": "en", "element": "subject", "qualifier": "discipline", "schema": "dc"}, {"key": "dc.date.updated", "value": "2012-01-02T13:44:46Z", "language": "", "element": "date", "qualifier": "updated", "schema": "dc"}, {"key": "dc.type.coar", "value": "http://purl.org/coar/resource_type/c_bdcc", "language": null, "element": "type", "qualifier": "coar", "schema": "dc"}, {"key": "dc.rights.accesslevel", "value": "openAccess", "language": "fi", "element": "rights", "qualifier": "accesslevel", "schema": "dc"}, {"key": "dc.type.publication", "value": "masterThesis", "language": null, "element": "type", "qualifier": "publication", "schema": "dc"}, {"key": "dc.subject.oppiainekoodi", "value": "4021", "language": null, "element": "subject", "qualifier": "oppiainekoodi", "schema": "dc"}, {"key": "dc.subject.yso", "value": "nanohiukkaset", "language": null, "element": "subject", "qualifier": "yso", "schema": "dc"}, {"key": "dc.subject.yso", "value": "nanotekniikka", "language": null, "element": "subject", "qualifier": "yso", "schema": "dc"}, {"key": "dc.format.content", "value": "fulltext", "language": null, "element": "format", "qualifier": "content", "schema": "dc"}, {"key": "dc.rights.url", "value": "https://rightsstatements.org/page/InC/1.0/", "language": null, "element": "rights", "qualifier": "url", "schema": "dc"}, {"key": "dc.type.okm", "value": "G2", "language": null, "element": "type", "qualifier": "okm", "schema": "dc"}]
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